Influence of Etching Modes on the Surface Topography of Silicon Plates and Their Adhesion Properties

Мұқаба

Дәйексөз келтіру

Толық мәтін

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Аннотация

In the design of a certain class of microelectromechanical systems, contact pairs are used consisting of a silicon plate and an element made of softer material. Under mechanical loading of such contacts, the adhesive interaction of the surfaces plays a significant role due to their relative smoothness. The adhesion forces in the contact of surfaces will significantly depend on their topography. The samples of electrical silicon etched in a medium of acids KO+KOH+KNO3, differing in the ratio of its components and exposure time, are studied. The condition of the surface of the samples was investigated using optical, electron and probe microscopy. The parameters of surface roughness after etching have been determined using probe microscopy. An increase in the etching time leads to an increase in the surface roughness. The concentration of acids affects the surface topography of the samples, i.e., an increase in concentration promotes the formation of a surface with a regular microrelief, close in the shape of irregularities to sinusoidal waviness. A mathematical model is proposed to assess the influence of microrelief parameters on the adhesion force in contact with a smooth elastic surface. The calculation results have shown that the height parameters of roughness have the greatest influence on the adhesion properties of the sample surfaces.

Толық мәтін

Рұқсат жабық

Авторлар туралы

О. Shcherbakova

Ishlinsky Institute for Problems in Mechanics, Russian Academy of Sciences

Хат алмасуға жауапты Автор.
Email: shcherbakovaoo@mail.ru
Ресей, Moscow, 119526

T. Muravyeva

Ishlinsky Institute for Problems in Mechanics, Russian Academy of Sciences

Email: shcherbakovaoo@mail.ru
Ресей, Moscow, 119526

I. Tsukanov

Ishlinsky Institute for Problems in Mechanics, Russian Academy of Sciences

Email: shcherbakovaoo@mail.ru
Ресей, Moscow, 119526

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2. 1. Images of the surfaces of silicon samples 1 (a), 2 (b), 3 (c), 4 (d), 5 (e), 6 (e) after etching, obtained using an optical microscope.

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3. Fig. 2. SEM images of surfaces of samples 1 (a), 2 (b), 3 (c).

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4. Fig. 3. SPM images (on the left) and profilograms of roughness (on the right) of surfaces of samples 1 (a), 2 (b), 3 (c) along the lines indicated in the images.

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5. 4. The scheme of the contact problem (a) and the approximation of the Lennard–Jones potential (1) by a piecewise constant function (2) according to the Maugy–Dugdale model (b).

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6. 5. Dependences of the dimensionless nominal pressure on the dimensionless average displacement of the wavy surface upon contact, taking into account the adhesive forces in the gap for samples 1 (a), 2 (b), 3 (c).

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