Informaçao sobre o Autor

Masalsky, N. V.

Edição	Seção	Título	Arquivo
Volume 53, Nº 3 (2024)	MODELING	Simulation of silicon conical field effect GAA nanotransistors with stack SiO2/HfO2 dielectric of gate
Volume 53, Nº 5 (2024)	INSTRUMENTATION	Temperature dependences of the breakdown voltage of a high-voltage LDMOS transistor
Volume 54, Nº 2 (2025)	NANOTRANSISTORS	Effect of boundary roughness on the variability of the I-V data of silicon field-effect GAA nanotransistors